Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate

In this study, we report a low power Ni/GeO_x /TiO_y /TaN resistive random access memory (RRAM) using plasma-modified electrode. The low sub-mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high-temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta-N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high-temperature current distribution.