Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate

Zhi Wei Zheng, Hsiao Hsuan Hsu, Chun Hu Cheng

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

摘要

In this study, we report a low power Ni/GeOx /TiOy /TaN resistive random access memory (RRAM) using plasma-modified electrode. The low sub-mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high-temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta-N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high-temperature current distribution.

原文英語
頁(從 - 到)100-104
頁數5
期刊Physica Status Solidi - Rapid Research Letters
8
發行號1
DOIs
出版狀態已發佈 - 2014 一月 1

    指紋

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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