Interface characterization and current conduction in HfO 2 -gated MOS capacitors

H. W. Chen, F. C. Chiu, C. H. Liu, S. Y. Chen, H. S. Huang, P. C. Juan, H. L. Hwang

研究成果: 雜誌貢獻文章

30 引文 斯高帕斯(Scopus)

摘要

Metal-oxide-semiconductor (MOS) capacitors incorporating hafnium dioxide (HfO 2 ) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized based on capacitance-voltage (C-V) and current-voltage (I-V) measurements. Thereafter the current conduction mechanism, electron effective mass (m*), mean density of interface traps per unit area and energy (over(D, ̄) it ), energy distribution of interface traps density and near-interface oxide traps density (N NIOT ) were studied in details. The characterization reveals that the dominant conduction mechanism in the region of high temperature and high field is Schottky emission. The mean density of interface traps per unit area and energy is about 6.3 × 10 12 cm -2 eV -1 by using high-low frequency capacitance method. The maximum D it is about 7.76 × 10 12 cm -2 eV -1 located at 0.27 eV above the valence band.

原文英語
頁(從 - 到)6112-6115
頁數4
期刊Applied Surface Science
254
發行號19
DOIs
出版狀態已發佈 - 2008 七月 30

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

指紋 深入研究「Interface characterization and current conduction in HfO <sub>2</sub> -gated MOS capacitors」主題。共同形成了獨特的指紋。

引用此