Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes

M. W. Lee; H. C. Hsueh; H. M. Lin; C. C. Chen

Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes

M. W. Lee^*, H. C. Hsueh, H. M. Lin, C. C. Chen

^*此作品的通信作者

化學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

16 引文斯高帕斯（Scopus）

摘要

This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0-4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.

原文	英語
文章編號	161309
頁（從 - 到）	1613091-1613094
頁數	4
期刊	Physical Review B - Condensed Matter and Materials Physics
卷	67
發行號	16
出版狀態	已發佈 - 2003 4月

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學

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引用此

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abstract = "This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0-4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.",

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N2 - This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0-4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.

AB - This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0-4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.

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Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes

摘要

ASJC Scopus subject areas

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