Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes

C. C. Chen; M. W. Lee; H. C. Hsueh; H. M. Lin

doi:10.1103/PhysRevB.67.161309

Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes

C. C. Chen, M. W. Lee^*, H. C. Hsueh, H. M. Lin

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0–4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.

原文	英語
期刊	Physical Review B - Condensed Matter and Materials Physics
卷	67
發行號	16
DOIs	https://doi.org/10.1103/PhysRevB.67.161309
出版狀態	已發佈 - 2003 4月 30
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學

存取文件

10.1103/PhysRevB.67.161309

其它文件與鏈接

引用此

@article{76c3c784e8534506aa2e38e01d9a840c,

title = "Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes",

abstract = "This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0–4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.",

author = "Chen, {C. C.} and Lee, {M. W.} and Hsueh, {H. C.} and Lin, {H. M.}",

year = "2003",

month = apr,

day = "30",

doi = "10.1103/PhysRevB.67.161309",

language = "English",

volume = "67",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "16",

}

TY - JOUR

T1 - Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes

AU - Chen, C. C.

AU - Lee, M. W.

AU - Hsueh, H. C.

AU - Lin, H. M.

PY - 2003/4/30

Y1 - 2003/4/30

N2 - This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0–4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.

AB - This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0–4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.

UR - http://www.scopus.com/inward/record.url?scp=85038298751&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85038298751&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.67.161309

DO - 10.1103/PhysRevB.67.161309

M3 - Article

AN - SCOPUS:85038298751

SN - 1098-0121

VL - 67

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 16

ER -

Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此