Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes

C. C. Chen, M. W. Lee*, H. C. Hsueh, H. M. Lin

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0–4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.

原文英語
期刊Physical Review B - Condensed Matter and Materials Physics
67
發行號16
DOIs
出版狀態已發佈 - 2003 四月 30
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學

指紋

深入研究「Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes」主題。共同形成了獨特的指紋。

引用此