Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes

M. W. Lee, H. C. Hsueh, H. M. Lin, C. C. Chen

研究成果: 雜誌貢獻文章

15 引文 斯高帕斯(Scopus)

摘要

This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0-4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.

原文英語
文章編號161309
頁(從 - 到)1613091-1613094
頁數4
期刊Physical Review B - Condensed Matter and Materials Physics
67
發行號16
出版狀態已發佈 - 2003 四月 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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