In_0.18Al_0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact

Engineering & Materials Science

• Management information systems 100%
• High electron mobility transistors 93%
• Substrates 42%
• Lattice mismatch 36%
• Ohmic contacts 30%
• Sapphire 26%
• Indium 26%
• Polarization 18%
• Throughput 14%
• Hot Temperature 9%
• Costs 7%

Physics & Astronomy

• MIS (semiconductors) 90%
• high electron mobility transistors 83%
• indium 19%
• electric contacts 17%
• sapphire 17%
• dissipation 16%
• wafers 15%
• polarization 10%

Chemical Compounds

• Dissipation 88%
• Polarization 60%
• Application 25%