Initial stages of Ni-driven nanostructures growth on Ag/Ge(111)- √3×√3 surface

Agnieszka Tomaszewska, Xiao Lan Huang, Chun Liang Lin, Kuo Wei Chang, Tsu Yi Fu

研究成果: 書貢獻/報告類型會議貢獻

摘要

Using STM, we have investigated early stages of nanostructures formation upon room temperature (RT) deposition of 0.12 ML Ni onto Ag/Ge(111)- √3×√3 surface. While RT growth mode is determined by cluster formation, annealing up to 200°C promotes cluster nucleation. Further annealing results in creation of hexagonal-shaped islands which conserve on the surface in the unchanged form even after 800°C annealing. Unusual thermal stability of these islands is explained in terms of Ni-Ge compounds formation.

原文英語
主出版物標題4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
出版狀態已發佈 - 2011 九月 26
事件4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, 臺灣
持續時間: 2011 六月 212011 六月 24

出版系列

名字Proceedings - International NanoElectronics Conference, INEC
ISSN(列印)2159-3523

其他

其他4th IEEE International Nanoelectronics Conference, INEC 2011
國家臺灣
城市Tao-Yuan
期間11/6/2111/6/24

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • 引用此

    Tomaszewska, A., Huang, X. L., Lin, C. L., Chang, K. W., & Fu, T. Y. (2011). Initial stages of Ni-driven nanostructures growth on Ag/Ge(111)- √3×√3 surface. 於 4th IEEE International NanoElectronics Conference, INEC 2011 [5991662] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991662