InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition

T. S. Ko; T. C. Wang; R. C. Gao; Y. J. Lee; T. C. Lu; H. C. Kuo; S. C. Wang; H. G. Chen

doi:10.1063/1.2430487

InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition

T. S. Ko^*, T. C. Wang, R. C. Gao, Y. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang, H. G. Chen

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

10 引文斯高帕斯（Scopus）

摘要

The authors have used metal organic chemical vapor deposition to grow InGaNGaN multiple quantum well (MQW) nanostripes on trapezoidally patterned c -plane sapphire substrates. Transmission electron microscopy (TEM) images clearly revealed that the MQWs grew not only on the top faces of the trapezoids but also on both lateral side facets along the [0001] direction defined by the selected area electron diffraction pattern. Meanwhile, dislocations that stretched from the interfaces between the GaN and the substrates did not pass through the MQWs in the TEM observation. Microphotoluminescence measurements verified that the luminescence efficiency from a single nanostripe was enhanced by up to fivefold relative to those of regular thin film MQW structures. Observation of the cathodoluminescence identified the areas of light emission and confirmed that enhanced emission occurred from the nanostripes.

原文	英語
文章編號	013110
期刊	Applied Physics Letters
卷	90
發行號	1
DOIs	https://doi.org/10.1063/1.2430487
出版狀態	已發佈 - 2007
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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title = "InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition",

abstract = "The authors have used metal organic chemical vapor deposition to grow InGaNGaN multiple quantum well (MQW) nanostripes on trapezoidally patterned c -plane sapphire substrates. Transmission electron microscopy (TEM) images clearly revealed that the MQWs grew not only on the top faces of the trapezoids but also on both lateral side facets along the [0001] direction defined by the selected area electron diffraction pattern. Meanwhile, dislocations that stretched from the interfaces between the GaN and the substrates did not pass through the MQWs in the TEM observation. Microphotoluminescence measurements verified that the luminescence efficiency from a single nanostripe was enhanced by up to fivefold relative to those of regular thin film MQW structures. Observation of the cathodoluminescence identified the areas of light emission and confirmed that enhanced emission occurred from the nanostripes.",

author = "Ko, {T. S.} and Wang, {T. C.} and Gao, {R. C.} and Lee, {Y. J.} and Lu, {T. C.} and Kuo, {H. C.} and Wang, {S. C.} and Chen, {H. G.}",

note = "Funding Information: The authors would like to thank Professor Y. F. Chen of National Taiwan University for CL support. The study was supported by the MOE ATU program and, in part, by the National Science Council of the Republic of China under Contract Nos. NSC 95-2120-M-009-008, NSC 95-2752-E-009-007-PAE, and NSC 95-2221-E-009-282.",

year = "2007",

doi = "10.1063/1.2430487",

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AU - Ko, T. S.

AU - Wang, T. C.

AU - Gao, R. C.

AU - Lee, Y. J.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

AU - Chen, H. G.

N1 - Funding Information: The authors would like to thank Professor Y. F. Chen of National Taiwan University for CL support. The study was supported by the MOE ATU program and, in part, by the National Science Council of the Republic of China under Contract Nos. NSC 95-2120-M-009-008, NSC 95-2752-E-009-007-PAE, and NSC 95-2221-E-009-282.

PY - 2007

Y1 - 2007

N2 - The authors have used metal organic chemical vapor deposition to grow InGaNGaN multiple quantum well (MQW) nanostripes on trapezoidally patterned c -plane sapphire substrates. Transmission electron microscopy (TEM) images clearly revealed that the MQWs grew not only on the top faces of the trapezoids but also on both lateral side facets along the [0001] direction defined by the selected area electron diffraction pattern. Meanwhile, dislocations that stretched from the interfaces between the GaN and the substrates did not pass through the MQWs in the TEM observation. Microphotoluminescence measurements verified that the luminescence efficiency from a single nanostripe was enhanced by up to fivefold relative to those of regular thin film MQW structures. Observation of the cathodoluminescence identified the areas of light emission and confirmed that enhanced emission occurred from the nanostripes.

AB - The authors have used metal organic chemical vapor deposition to grow InGaNGaN multiple quantum well (MQW) nanostripes on trapezoidally patterned c -plane sapphire substrates. Transmission electron microscopy (TEM) images clearly revealed that the MQWs grew not only on the top faces of the trapezoids but also on both lateral side facets along the [0001] direction defined by the selected area electron diffraction pattern. Meanwhile, dislocations that stretched from the interfaces between the GaN and the substrates did not pass through the MQWs in the TEM observation. Microphotoluminescence measurements verified that the luminescence efficiency from a single nanostripe was enhanced by up to fivefold relative to those of regular thin film MQW structures. Observation of the cathodoluminescence identified the areas of light emission and confirmed that enhanced emission occurred from the nanostripes.

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InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition

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