InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition

T. S. Ko*, T. C. Wang, R. C. Gao, Ya-Ju Lee, T. C. Lu, H. C. Kuo, S. C. Wang, H. G. Chen

*此作品的通信作者

    研究成果: 雜誌貢獻期刊論文同行評審

    10 引文 斯高帕斯(Scopus)

    摘要

    The authors have used metal organic chemical vapor deposition to grow InGaNGaN multiple quantum well (MQW) nanostripes on trapezoidally patterned c -plane sapphire substrates. Transmission electron microscopy (TEM) images clearly revealed that the MQWs grew not only on the top faces of the trapezoids but also on both lateral side facets along the [0001] direction defined by the selected area electron diffraction pattern. Meanwhile, dislocations that stretched from the interfaces between the GaN and the substrates did not pass through the MQWs in the TEM observation. Microphotoluminescence measurements verified that the luminescence efficiency from a single nanostripe was enhanced by up to fivefold relative to those of regular thin film MQW structures. Observation of the cathodoluminescence identified the areas of light emission and confirmed that enhanced emission occurred from the nanostripes.

    原文英語
    文章編號013110
    期刊Applied Physics Letters
    90
    發行號1
    DOIs
    出版狀態已發佈 - 2007

    ASJC Scopus subject areas

    • 物理與天文學(雜項)

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