InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6 μm-emitting quantum-cascade-laser active regions

L. J. Mawst*, J. D. Kirch, C. C. Chang, T. Kim, T. Garrod, D. Botez, S. Ruder, T. F. Kuech, T. Earles, R. Tatavarti, N. Pan, A. Wibowo

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

30 引文 斯高帕斯(Scopus)

摘要

Short-wavelength (λ∼3.6 μm) quantum-cascade-laser (QCL) designs, employing a metamorphic buffer layer (MBL) on a GaAs substrate, have been developed for strong carrier confinement to the active regions, as a result of implementing the deep well and tapered active-region concepts. The strain · thickness product values for the quantum wells and barriers comprising the QCL active regions (ARs) are kept basically the same as those employed for longer wavelength (λ∼4.8 μm) QCL AR structures grown on InP substrates. Strain-compensated superlattice (SL) structures, representative of the QCL AR, are grown by metalorganic vapor phase epitaxy (MOVPE) on an AlInGaAs compositionally step-graded MBL. Structural characterization of the SL structures underscores the importance of reducing the top-surface roughness of the underlying MBL. Intersubband absorption has been observed for doped SL structures grown on hydride-VPE-grown MBLs.

原文英語
頁(從 - 到)230-235
頁數6
期刊Journal of Crystal Growth
370
DOIs
出版狀態已發佈 - 2013 五月 1
對外發佈

ASJC Scopus subject areas

  • 凝聚態物理學
  • 無機化學
  • 材料化學

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