Infrared proximity sensor using organic light-emitting diode with quantum dots converter

En Chen Chen, Han Cheng Yeh, Yu Chiang Chao, Hsin Fei Meng*, Hsiao Wen Zan, Yun Chi Liang, Chin Ping Huang, Teng Ming Chen, Chih Feng Wang, Chu Chen Chueh, Wen Chang Chen, Sheng Fu Horng

*此作品的通信作者

    研究成果: 雜誌貢獻期刊論文同行評審

    8 引文 斯高帕斯(Scopus)

    摘要

    An efficient visible-to-infrared conversion film is made by blending CdTe quantum dots (CdTe QDs) of 12 nm diameter in a polyvinylpyrrolidone 360 (PVP 360) polymer matrix cast by water solution. The solid-state photoluminescence quantum efficiency exceeds 10% with emission peak at 810 nm. Strong 810 emission is obtained by combining the quantum dot film and a green polyfluorene light-emitting diode. Color filter is used to remove residual light below 780 nm to make it entirely invisible. Infrared photo-detector is made by blending poly[5-(5-(2,5-bis(decyloxy)-4-methylphenyl)thiophen-2-yl)-2, 3-bis(4-(2-ethylhexyloxy)phenyl)-7-(5-methylthiophen-2-yl)thieno[3,4-b]pyrazine] (PBDOTTP) with band-gap 1.2 eV and (6,6)-phenyl-C61-butyric acid methyl ester (PCBM). The pixel contains one PD surrounded by four PLED on its four sides. The active areas of the five devices are all 1 cm by 1 cm and they are on the same plane. Infrared proximity sensor with photo-current over 300 nA at 10 cm object distance is achieved by detecting the reflected infrared signal.

    原文英語
    頁(從 - 到)2312-2318
    頁數7
    期刊Organic Electronics
    13
    發行號11
    DOIs
    出版狀態已發佈 - 2012 十一月

    ASJC Scopus subject areas

    • 電子、光磁材料
    • 生物材料
    • 化學 (全部)
    • 凝聚態物理學
    • 材料化學
    • 電氣與電子工程

    指紋

    深入研究「Infrared proximity sensor using organic light-emitting diode with quantum dots converter」主題。共同形成了獨特的指紋。

    引用此