Infrared electroluminescence from metal-oxide-semiconductor structures on silicon

Ching Fuh Lin*, C. W. Liu, Miin Jang Chen, M. H. Lee, I. C. Lin

*此作品的通信作者

研究成果: 雜誌貢獻回顧評介論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

Room temperature electroluminescence from metal-oxide-semiconductor structures on silicon is observed. The thin oxide is grown by rapid thermal oxidation. With the metal negatively biased, luminescence can be observed. The emission is voltage dependent. For an applied voltage below 5 V, the emission occurs around 1150 nm, approximately corresponding to the Si bandgap energy. For a larger applied voltage, the emission shifts to wavelengths much longer than 1150 nm. The physical reason for the electroluminescence at bandgap energy is attributed to disorder near the Si-SiO2 interface, while the electroluminescence at longer wavelengths could be possibly caused by the c-c or v-v radiative transition.

原文英語
頁(從 - 到)L205-L210
期刊Journal of Physics Condensed Matter
12
發行號11
DOIs
出版狀態已發佈 - 2000
對外發佈

ASJC Scopus subject areas

  • 材料科學(全部)
  • 凝聚態物理學

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