CdTe is an important material for thin film solar cells and radiation detectors, and with very small lattice mismatch of about 0.01% to InSb. Here, we study on a series of CdTe thin films on InSb substrate under different ion time and temperature from molecular beam epitaxy (MBE), by infrared reflectance (IRR) spectroscopy and extended X-ray absorption fine structure (EXAFS). Samples were measured by infrared reflectance spectroscopy. Simulation/fittings were performed to obtain their values of transverse optical (TO) phonon frequency, damping constant, mode strength, carrier concentration, etc. The local atomic structure and phonon properties as well as effects by the ion cleaning conditions are obtained. Samples were also measured by extended X-ray absorption fine structure (EXAFS). X-ray absorption spectra were collected at Cd K-edge (∼26711 eV) in 26500-27700 eV and X-ray fluorescence yield mode. After data processing, Fourier transform and program fittings, the bond lengths of the 1st nearest Cd-Te and 2nd nearest Cd-Cd atomic bonding as well as the coordination numbers are obtained.