Infrared and Raman-scattering studies in single-crystalline GaN nanowires

Hsiang Lin Liu; Chia Chun Chen; Chih Ta Chia; Chun Chia Yeh; Chun Ho Chen; Ming Yuan Yu; Stacia Keller; Steven P. Denbaars

doi:10.1016/S0009-2614(01)00858-2

Infrared and Raman-scattering studies in single-crystalline GaN nanowires

Hsiang Lin Liu^*
, Chia Chun Chen
, Chih Ta Chia
, Chun Chia Yeh
, Chun Ho Chen
, Ming Yuan Yu
, Stacia Keller
, Steven P. Denbaars

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

159 引文斯高帕斯（Scopus）

摘要

Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm^-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.

原文	英語
頁（從 - 到）	245-251
頁數	7
期刊	Chemical Physics Letters
卷	345
發行號	3-4
DOIs	https://doi.org/10.1016/S0009-2614(01)00858-2
出版狀態	已發佈 - 2001 9月 14

ASJC Scopus subject areas

一般物理與天文學
物理與理論化學

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10.1016/S0009-2614(01)00858-2

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@article{ff3d8039ed4a4851b0083386be588d47,

title = "Infrared and Raman-scattering studies in single-crystalline GaN nanowires",

abstract = "Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at \textasciitilde{}254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.",

author = "Liu, \{Hsiang Lin\} and Chen, \{Chia Chun\} and Chia, \{Chih Ta\} and Yeh, \{Chun Chia\} and Chen, \{Chun Ho\} and Yu, \{Ming Yuan\} and Stacia Keller and Denbaars, \{Steven P.\}",

note = "Funding Information: We acknowledge K.H. Chen, Y.F. Chen, and C.-K. Sun for helpful discussions, and we would also like to thank J.L. Musfeldt for the use of her infrared microscope system in portion of this work, and C.N. Chang for help on SEM measurements. One of us (H.L.L.) would like to gratefully acknowledge financial support from the National Science Council of Republic of China under Grant No. NSC 89-2112-M-003-036.",

year = "2001",

month = sep,

day = "14",

doi = "10.1016/S0009-2614(01)00858-2",

language = "English",

volume = "345",

pages = "245--251",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier BV",

number = "3-4",

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TY - JOUR

T1 - Infrared and Raman-scattering studies in single-crystalline GaN nanowires

AU - Liu, Hsiang Lin

AU - Chen, Chia Chun

AU - Chia, Chih Ta

AU - Yeh, Chun Chia

AU - Chen, Chun Ho

AU - Yu, Ming Yuan

AU - Keller, Stacia

AU - Denbaars, Steven P.

N1 - Funding Information: We acknowledge K.H. Chen, Y.F. Chen, and C.-K. Sun for helpful discussions, and we would also like to thank J.L. Musfeldt for the use of her infrared microscope system in portion of this work, and C.N. Chang for help on SEM measurements. One of us (H.L.L.) would like to gratefully acknowledge financial support from the National Science Council of Republic of China under Grant No. NSC 89-2112-M-003-036.

PY - 2001/9/14

Y1 - 2001/9/14

N2 - Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.

AB - Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.

UR - https://www.scopus.com/pages/publications/0000893562

UR - https://www.scopus.com/pages/publications/0000893562#tab=citedBy

U2 - 10.1016/S0009-2614(01)00858-2

DO - 10.1016/S0009-2614(01)00858-2

M3 - Article

AN - SCOPUS:0000893562

SN - 0009-2614

VL - 345

SP - 245

EP - 251

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 3-4

ER -

Infrared and Raman-scattering studies in single-crystalline GaN nanowires

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