Infrared and Raman-scattering studies in single-crystalline GaN nanowires

Hsiang Lin Liu*, Chia Chun Chen, Chih Ta Chia, Chun Chia Yeh, Chun Ho Chen, Ming Yuan Yu, Stacia Keller, Steven P. Denbaars

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

146 引文 斯高帕斯(Scopus)

摘要

Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.

原文英語
頁(從 - 到)245-251
頁數7
期刊Chemical Physics Letters
345
發行號3-4
DOIs
出版狀態已發佈 - 2001 九月 14

ASJC Scopus subject areas

  • 物理與天文學 (全部)
  • 物理與理論化學

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