Influence of plasma fluorination on p-type channel tin-oxide thin film transistors

Po Chun Chen, Yu Chien Chiu, Zhi Wei Zheng, Chun Hu Cheng, Yung Hsien Wu

研究成果: 雜誌貢獻文章同行評審

15 引文 斯高帕斯(Scopus)

摘要

This paper describes a high-performance p-type tin-oxide (SnO) thin film transistor (TFT) using fluorine plasma treatment on the SnO active channel layer. The influence of fluorine plasma treatment for this p-type SnO TFT device was also investigated. Through tuning the fluorine plasma power treated on the SnO active channel layer at low temperature, the optimal p-type SnO TFT device exhibits a very high on/off current ratio of 9.6 × 106, a field-effect mobility of 2.13 cm2 V−1 s−1, a very low subthreshold swing of 106 mV/dec and an extremely low off-state current of 1 pA at a low driven voltage of <3 V. These good characteristics can be attributed to fluorine plasma treatment on p-type SnO channel that reduced crystallized channel roughness and passivated oxygen vacancies and interface traps. This high-performance p-type SnO TFT device using fluorine plasma treatment on the active channel shows great promise for future high-resolution and high-speed display applications.

原文英語
頁(從 - 到)162-166
頁數5
期刊Journal of Alloys and Compounds
707
DOIs
出版狀態已發佈 - 2017 一月 1

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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