Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (CeO2)- semiconductor nonvolatile memory structures

Pi Chun Juan; Chih Wei Hsu; Chuan Hsi Liu; Ming Tsong Wang; Ling Yen Yeh

doi:10.1016/j.mee.2011.03.043

Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO₃)-insulator (CeO₂)- semiconductor nonvolatile memory structures

Pi Chun Juan^*, Chih Wei Hsu, Chuan Hsi Liu, Ming Tsong Wang, Ling Yen Yeh

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Metal-multiferroic (La-substituted BiFeO₃)-insulator (CeO ₂)-semiconductor (MFIS) capacitors has been fabricated. The crystalline phase and amount of La³⁺ substitution at Bi-site were investigated by XRD and XPS in the postannealing temperature range from 500 to 700 °C, respectively. The microstructure and interfacial layer between CeO₂ and Si substrate were characterized by HRTEM. The memory windows as functions of insulator film thickness and DC power for La were measured. The maximum memory window is about 1.9 V under ±6 V applied voltage. The ferroelectric polarization increases with increasing substitution amount. The morphologies of La-substituted BiFeO₃ films were also studied by AFM.

原文	英語
頁（從 - 到）	1217-1220
頁數	4
期刊	Microelectronic Engineering
卷	88
發行號	7
DOIs	https://doi.org/10.1016/j.mee.2011.03.043
出版狀態	已發佈 - 2011 7月

ASJC Scopus subject areas

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
表面、塗料和薄膜
電氣與電子工程

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10.1016/j.mee.2011.03.043

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@article{46e539be115c4badb60dcb48279feb58,

title = "Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (CeO2)- semiconductor nonvolatile memory structures",

abstract = "Metal-multiferroic (La-substituted BiFeO3)-insulator (CeO 2)-semiconductor (MFIS) capacitors has been fabricated. The crystalline phase and amount of La3+ substitution at Bi-site were investigated by XRD and XPS in the postannealing temperature range from 500 to 700 °C, respectively. The microstructure and interfacial layer between CeO2 and Si substrate were characterized by HRTEM. The memory windows as functions of insulator film thickness and DC power for La were measured. The maximum memory window is about 1.9 V under ±6 V applied voltage. The ferroelectric polarization increases with increasing substitution amount. The morphologies of La-substituted BiFeO3 films were also studied by AFM.",

keywords = "CeO, Memory window, Multiferroic BiFeO",

author = "Juan, {Pi Chun} and Hsu, {Chih Wei} and Liu, {Chuan Hsi} and Wang, {Ming Tsong} and Yeh, {Ling Yen}",

note = "Funding Information: This work is supported by National Science Council, Taiwan, Republic of China under Contract No. NSC 99-2221-E-131-022-MY2 .",

year = "2011",

month = jul,

doi = "10.1016/j.mee.2011.03.043",

language = "English",

volume = "88",

pages = "1217--1220",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "7",

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T1 - Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (CeO2)- semiconductor nonvolatile memory structures

AU - Juan, Pi Chun

AU - Hsu, Chih Wei

AU - Liu, Chuan Hsi

AU - Wang, Ming Tsong

AU - Yeh, Ling Yen

N1 - Funding Information: This work is supported by National Science Council, Taiwan, Republic of China under Contract No. NSC 99-2221-E-131-022-MY2 .

PY - 2011/7

Y1 - 2011/7

N2 - Metal-multiferroic (La-substituted BiFeO3)-insulator (CeO 2)-semiconductor (MFIS) capacitors has been fabricated. The crystalline phase and amount of La3+ substitution at Bi-site were investigated by XRD and XPS in the postannealing temperature range from 500 to 700 °C, respectively. The microstructure and interfacial layer between CeO2 and Si substrate were characterized by HRTEM. The memory windows as functions of insulator film thickness and DC power for La were measured. The maximum memory window is about 1.9 V under ±6 V applied voltage. The ferroelectric polarization increases with increasing substitution amount. The morphologies of La-substituted BiFeO3 films were also studied by AFM.

AB - Metal-multiferroic (La-substituted BiFeO3)-insulator (CeO 2)-semiconductor (MFIS) capacitors has been fabricated. The crystalline phase and amount of La3+ substitution at Bi-site were investigated by XRD and XPS in the postannealing temperature range from 500 to 700 °C, respectively. The microstructure and interfacial layer between CeO2 and Si substrate were characterized by HRTEM. The memory windows as functions of insulator film thickness and DC power for La were measured. The maximum memory window is about 1.9 V under ±6 V applied voltage. The ferroelectric polarization increases with increasing substitution amount. The morphologies of La-substituted BiFeO3 films were also studied by AFM.

KW - CeO

KW - Memory window

KW - Multiferroic BiFeO

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U2 - 10.1016/j.mee.2011.03.043

DO - 10.1016/j.mee.2011.03.043

M3 - Article

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

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Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (CeO2)- semiconductor nonvolatile memory structures

摘要

ASJC Scopus subject areas

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Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO₃)-insulator (CeO₂)- semiconductor nonvolatile memory structures