Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (CeO2)- semiconductor nonvolatile memory structures

Pi Chun Juan, Chih Wei Hsu, Chuan Hsi Liu, Ming Tsong Wang, Ling Yen Yeh

研究成果: 雜誌貢獻文章同行評審

4 引文 斯高帕斯(Scopus)

摘要

Metal-multiferroic (La-substituted BiFeO3)-insulator (CeO 2)-semiconductor (MFIS) capacitors has been fabricated. The crystalline phase and amount of La3+ substitution at Bi-site were investigated by XRD and XPS in the postannealing temperature range from 500 to 700 °C, respectively. The microstructure and interfacial layer between CeO2 and Si substrate were characterized by HRTEM. The memory windows as functions of insulator film thickness and DC power for La were measured. The maximum memory window is about 1.9 V under ±6 V applied voltage. The ferroelectric polarization increases with increasing substitution amount. The morphologies of La-substituted BiFeO3 films were also studied by AFM.

原文英語
頁(從 - 到)1217-1220
頁數4
期刊Microelectronic Engineering
88
發行號7
DOIs
出版狀態已發佈 - 2011 七月 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

指紋 深入研究「Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO<sub>3</sub>)-insulator (CeO<sub>2</sub>)- semiconductor nonvolatile memory structures」主題。共同形成了獨特的指紋。

引用此