Indium-based ternary barrier high-electron-mobility transistors (HEMTs) directly on Si substrate is demonstrated in this letter with structure of In0.18Al0.82N/AlN/GaN-on-Si for high-power applications. The advantages of direct deposition on Si, compared with SiC or sapphire substrates, are high thermal dissipation and lower cost. The proposed InAlN barrier HEMTs exhibit a high ON/OFF ratio of ∼107 and a steep subthreshold swing of 67 mV/dec. IDsat is measured to be 163 mA/mm, VDS = 10 V, and VG = 2 V with LG = 2 μm. Material analysis using high-resolution X-ray diffraction and relaxation by reciprocal space mapping are also performed to confirm the indium barrier composition and epitaxy quality.
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