@article{3f450e6015f24d9ca266cf5a43de5d23,
title = "Indium-based ternary barrier high-electron-mobility transistors on Si substrate with high ON/OFF ratio for power applications",
abstract = "Indium-based ternary barrier high-electron-mobility transistors (HEMTs) directly on Si substrate is demonstrated in this letter with structure of In0.18Al0.82N/AlN/GaN-on-Si for high-power applications. The advantages of direct deposition on Si, compared with SiC or sapphire substrates, are high thermal dissipation and lower cost. The proposed InAlN barrier HEMTs exhibit a high ON/OFF ratio of ∼107 and a steep subthreshold swing of 67 mV/dec. IDsat is measured to be 163 mA/mm, VDS = 10 V, and VG = 2 V with LG = 2 μm. Material analysis using high-resolution X-ray diffraction and relaxation by reciprocal space mapping are also performed to confirm the indium barrier composition and epitaxy quality.",
keywords = "InAlN, Ternary barrier, high electron mobility transistor (HEMT)",
author = "Chen, {P. G.} and M. Tang and Lee, {M. H.}",
note = "Funding Information: tFunding for this paper came from the Medical Foundation, and subsequently from National Institute of Mental Health Fellowship #F3 1 MH I1815-0 I. *Doctoral Candidate, Department of Health Policy and Management, Johns Hopkins University School of Hygiene and Public Health, Baltimore, Maryland. **Lecturer, Department of Social Medicine, Harvard Medical School, Boston, Massachusetts. ***Professor of Statistical Computing, Department of Biostatistics, Harvard University School of Public Health, Boston, Massachusetts. Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2015",
month = mar,
day = "1",
doi = "10.1109/LED.2015.2389611",
language = "English",
volume = "36",
pages = "259--261",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}