Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening

Y. J. Lee*, H. C. Kuo, S. C. Wang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

61 引文 斯高帕斯(Scopus)

摘要

An n-side-up AlGaInP-based light-emitting diode (LED) with a triangle-like surface morphology was fabricated using the adhesive layer bonding technique, followed by wet etching to roughen the surface. The light output power of the roughened-surface LED was 1.6 times higher than that of a flat-surface LED at an injection current of 20 mA, i.e., a significant improvement attributed to the ability of the roughened surface to not only reduce the internal reflection between the rear mirror system and the semiconductor-air interface, but also to effectively scatter the light outside the LED device.

原文英語
頁(從 - 到)2289-2291
頁數3
期刊IEEE Photonics Technology Letters
17
發行號11
DOIs
出版狀態已發佈 - 2005 11月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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