InAsN grown by plasma-assisted gas source MBE

Ding Kang Shih*, Hao Hsiung Lin, Tso Yu Chu, T. R. Yang


研究成果: 雜誌貢獻會議論文同行評審


We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy. It is found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed from infrared reflectivity and Hall measurement on these degenerate InAsN samples. The sizeable increase on electron effective mass is consistent with the theoretical predictions based on band-anticrossing model.

頁(從 - 到)61-66
期刊Materials Research Society Symposium - Proceedings
出版狀態已發佈 - 2002
事件Progress in Semiconductor Materials for Optoelectronic Applications - Boston, MA, 美国
持續時間: 2001 11月 262001 11月 29

ASJC Scopus subject areas

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業


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