InAsN grown by plasma-assisted gas source MBE

Ding Kang Shih; Hao Hsiung Lin; Tso Yu Chu; T. R. Yang

InAsN grown by plasma-assisted gas source MBE

Ding Kang Shih^*, Hao Hsiung Lin, Tso Yu Chu, T. R. Yang

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

摘要

We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy. It is found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed from infrared reflectivity and Hall measurement on these degenerate InAsN samples. The sizeable increase on electron effective mass is consistent with the theoretical predictions based on band-anticrossing model.

原文	英語
頁（從 - 到）	61-66
頁數	6
期刊	Materials Research Society Symposium - Proceedings
卷	692
出版狀態	已發佈 - 2002
事件	Progress in Semiconductor Materials for Optoelectronic Applications - Boston, MA, 美国持續時間: 2001 11月 26 → 2001 11月 29

ASJC Scopus subject areas

一般材料科學
凝聚態物理學
材料力學
機械工業

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title = "InAsN grown by plasma-assisted gas source MBE",

abstract = "We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy. It is found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed from infrared reflectivity and Hall measurement on these degenerate InAsN samples. The sizeable increase on electron effective mass is consistent with the theoretical predictions based on band-anticrossing model.",

author = "Shih, {Ding Kang} and Lin, {Hao Hsiung} and Chu, {Tso Yu} and Yang, {T. R.}",

year = "2002",

language = "English",

volume = "692",

pages = "61--66",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

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note = "Progress in Semiconductor Materials for Optoelectronic Applications ; Conference date: 26-11-2001 Through 29-11-2001",

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TY - JOUR

T1 - InAsN grown by plasma-assisted gas source MBE

AU - Shih, Ding Kang

AU - Lin, Hao Hsiung

AU - Chu, Tso Yu

AU - Yang, T. R.

PY - 2002

Y1 - 2002

N2 - We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy. It is found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed from infrared reflectivity and Hall measurement on these degenerate InAsN samples. The sizeable increase on electron effective mass is consistent with the theoretical predictions based on band-anticrossing model.

AB - We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy. It is found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed from infrared reflectivity and Hall measurement on these degenerate InAsN samples. The sizeable increase on electron effective mass is consistent with the theoretical predictions based on band-anticrossing model.

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UR - http://www.scopus.com/inward/citedby.url?scp=0036061498&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036061498

SN - 0272-9172

VL - 692

SP - 61

EP - 66

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Progress in Semiconductor Materials for Optoelectronic Applications

Y2 - 26 November 2001 through 29 November 2001

ER -

InAsN grown by plasma-assisted gas source MBE

摘要

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