InAsN grown by plasma-assisted gas source MBE

Ding Kang Shih*, Hao Hsiung Lin, Tso Yu Chu, T. R. Yang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy. It is found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed from infrared reflectivity and Hall measurement on these degenerate InAsN samples. The sizeable increase on electron effective mass is consistent with the theoretical predictions based on band-anticrossing model.

原文英語
頁(從 - 到)61-66
頁數6
期刊Materials Research Society Symposium - Proceedings
692
出版狀態已發佈 - 2002
對外發佈

ASJC Scopus subject areas

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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