In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact

P. G. Chen, M. Tang, M. H. Liao, M. H. Lee*

*此作品的通信作者

研究成果: 雜誌貢獻通訊期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

Indium-based ternary-barrier high-electron-mobility transistors (HEMT) directly on Si substrate are demonstrated in this work, using a structure of In0.18Al0.82N/AlN/GaN-on-Si for high-power applications. The advantages of HEMTs on Si substrates are the low cost and high throughput, which are beneficial for large wafer scale. The thermal dissipation of Si occurs between SiC and the sapphire substrate. The proposed InAlN-barrier HEMTs exhibit a high ON/OFF ratio with >7 orders of magnitudes and an excellent subthreshold swing (SS) below 100 mV/dec, owing to high polarization and less lattice mismatch with GaN. The IDsat is measured to be 163 mA/mm at VDS = 10 V and VG = 2 V with LG = 2 μm. When compared with the control InAlN/AlN/GaN-on-Si MIS-HEMTs with Ohmic contacts, the OFF current is reduced by one order magnitude when using the Schottky-drain contact technology.

原文英語
頁(從 - 到)206-209
頁數4
期刊Solid-State Electronics
129
DOIs
出版狀態已發佈 - 2017 三月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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