In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

Meng Chen Tsai, Min-Hung Lee, Chin Lung Kuo, Hsin Chih Lin, Miin Jang Chen

研究成果: 雜誌貢獻文章

3 引文 (Scopus)

摘要

Amorphous and crystalline ZrO 2 gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J g ) of ∼7 × 10 −4  A/cm 2 with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO x N y in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO 2 from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J g of ∼1.4 × 10 −5  A/cm 2 as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO 2 gate dielectrics, and the nitrogen incorporation at the top of crystalline ZrO 2 is an effective approach to scale the CET and J g , as well as to improve the reliability.

原文英語
頁(從 - 到)274-279
頁數6
期刊Applied Surface Science
387
DOIs
出版狀態已發佈 - 2016 十一月 30

指紋

Nitridation
Gate dielectrics
Metallizing
Crystalline materials
Capacitance
Annealing
Nitrogen
Leakage currents
Permittivity
Current density

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

引用此文

In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics. / Tsai, Meng Chen; Lee, Min-Hung; Kuo, Chin Lung; Lin, Hsin Chih; Chen, Miin Jang.

於: Applied Surface Science, 卷 387, 30.11.2016, p. 274-279.

研究成果: 雜誌貢獻文章

Tsai, Meng Chen ; Lee, Min-Hung ; Kuo, Chin Lung ; Lin, Hsin Chih ; Chen, Miin Jang. / In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics. 於: Applied Surface Science. 2016 ; 卷 387. 頁 274-279.
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abstract = "Amorphous and crystalline ZrO 2 gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J g ) of ∼7 × 10 −4  A/cm 2 with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO x N y in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO 2 from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J g of ∼1.4 × 10 −5  A/cm 2 as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO 2 gate dielectrics, and the nitrogen incorporation at the top of crystalline ZrO 2 is an effective approach to scale the CET and J g , as well as to improve the reliability.",
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AU - Tsai, Meng Chen

AU - Lee, Min-Hung

AU - Kuo, Chin Lung

AU - Lin, Hsin Chih

AU - Chen, Miin Jang

PY - 2016/11/30

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N2 - Amorphous and crystalline ZrO 2 gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J g ) of ∼7 × 10 −4  A/cm 2 with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO x N y in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO 2 from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J g of ∼1.4 × 10 −5  A/cm 2 as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO 2 gate dielectrics, and the nitrogen incorporation at the top of crystalline ZrO 2 is an effective approach to scale the CET and J g , as well as to improve the reliability.

AB - Amorphous and crystalline ZrO 2 gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J g ) of ∼7 × 10 −4  A/cm 2 with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO x N y in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO 2 from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J g of ∼1.4 × 10 −5  A/cm 2 as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO 2 gate dielectrics, and the nitrogen incorporation at the top of crystalline ZrO 2 is an effective approach to scale the CET and J g , as well as to improve the reliability.

KW - Atomic layer deposition (ALD)

KW - In situ

KW - Metal oxide semiconductor (MOS)

KW - NH3 plasma

KW - Nitridation

KW - Zirconium dioxide (ZrO2)

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