@inproceedings{d6ebf67dcb34430a9e887a6f1ac7198d,
title = "Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS",
abstract = "To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.",
keywords = "Diode, electrostatic discharge (ESD), radio-frequency (RF), silicon-controlled rectifier (SCR)",
author = "Lin, \{Chun Yu\} and Fan, \{Mei Lian\} and Ker, \{Ming Dou\} and Chu, \{Li Wei\} and Tseng, \{Jen Chou\} and Song, \{Ming Hsiang\}",
year = "2014",
doi = "10.1109/IRPS.2014.6861132",
language = "English",
isbn = "9781479933167",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "EL.1.1--EL.1.4",
booktitle = "2014 IEEE International Reliability Physics Symposium, IRPS 2014",
note = "52nd IEEE International Reliability Physics Symposium, IRPS 2014 ; Conference date: 01-06-2014 Through 05-06-2014",
}