Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Chun Yu Lin, Mei Lian Fan, Ming Dou Ker, Li Wei Chu, Jen Chou Tseng, Ming Hsiang Song

研究成果: 書貢獻/報告類型會議論文篇章

10 引文 斯高帕斯(Scopus)

摘要

To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

原文英語
主出版物標題2014 IEEE International Reliability Physics Symposium, IRPS 2014
發行者Institute of Electrical and Electronics Engineers Inc.
頁面EL.1.1-EL.1.4
ISBN(列印)9781479933167
DOIs
出版狀態已發佈 - 2014
事件52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, 美国
持續時間: 2014 六月 12014 六月 5

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
ISSN(列印)1541-7026

其他

其他52nd IEEE International Reliability Physics Symposium, IRPS 2014
國家/地區美国
城市Waikoloa, HI
期間2014/06/012014/06/05

ASJC Scopus subject areas

  • 工程 (全部)

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