Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Chun Yu Lin; Mei Lian Fan; Ming Dou Ker; Li Wei Chu; Jen Chou Tseng; Ming Hsiang Song

doi:10.1109/IRPS.2014.6861132

Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Chun Yu Lin, Mei Lian Fan, Ming Dou Ker, Li Wei Chu, Jen Chou Tseng, Ming Hsiang Song

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

13 引文斯高帕斯（Scopus）

摘要

To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

原文	英語
主出版物標題	2014 IEEE International Reliability Physics Symposium, IRPS 2014
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	EL.1.1-EL.1.4
ISBN（列印）	9781479933167
DOIs	https://doi.org/10.1109/IRPS.2014.6861132
出版狀態	已發佈 - 2014
事件	52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, 美国持續時間: 2014 6月 1 → 2014 6月 5

出版系列

名字	IEEE International Reliability Physics Symposium Proceedings
ISSN（列印）	1541-7026

其他

其他	52nd IEEE International Reliability Physics Symposium, IRPS 2014
國家/地區	美国
城市	Waikoloa, HI
期間	2014/06/01 → 2014/06/05

ASJC Scopus subject areas

一般工程

存取文件

10.1109/IRPS.2014.6861132

其它文件與鏈接

引用此

Lin, C. Y., Fan, M. L., Ker, M. D., Chu, L. W., Tseng, J. C., & Song, M. H. (2014). Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. 於 2014 IEEE International Reliability Physics Symposium, IRPS 2014 (頁 EL.1.1-EL.1.4). 文章 6861132 (IEEE International Reliability Physics Symposium Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2014.6861132

Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. / Lin, Chun Yu; Fan, Mei Lian; Ker, Ming Dou 等.
2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. EL.1.1-EL.1.4 6861132 (IEEE International Reliability Physics Symposium Proceedings).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Lin, CY, Fan, ML, Ker, MD, Chu, LW, Tseng, JC & Song, MH 2014, Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. 於 2014 IEEE International Reliability Physics Symposium, IRPS 2014., 6861132, IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 頁 EL.1.1-EL.1.4, 52nd IEEE International Reliability Physics Symposium, IRPS 2014, Waikoloa, HI, 美国, 2014/06/01. https://doi.org/10.1109/IRPS.2014.6861132

Lin CY, Fan ML, Ker MD, Chu LW, Tseng JC, Song MH. Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. 於 2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. EL.1.1-EL.1.4. 6861132. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2014.6861132

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title = "Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS",

abstract = "To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.",

keywords = "Diode, electrostatic discharge (ESD), radio-frequency (RF), silicon-controlled rectifier (SCR)",

author = "Lin, {Chun Yu} and Fan, {Mei Lian} and Ker, {Ming Dou} and Chu, {Li Wei} and Tseng, {Jen Chou} and Song, {Ming Hsiang}",

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AB - To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

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Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

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