TY - JOUR
T1 - Improving ESD Robustness of pMOS Device With Embedded SCR in 28-nm High-k/Metal Gate CMOS Process
AU - Lin, Chun Yu
AU - Chang, Pin Hsin
AU - Chang, Rong Kun
PY - 2015/4/1
Y1 - 2015/4/1
N2 - A pMOS device with an embedded silicon-controlled rectifier to improve its electrostatic discharge (ESD) robustness has been proposed and implemented in a 28-nm high-k/metal gate CMOS process. An additional p-type ESD implantation layer was added into the pMOS to realize the proposed device. The experimental results show that the proposed device has the advantages of high ESD robustness, low holding voltage, low parasitic capacitance, and good latchup immunity. With better performances, the proposed device was more suitable for ESD protection in a sub-50-nm CMOS process.
AB - A pMOS device with an embedded silicon-controlled rectifier to improve its electrostatic discharge (ESD) robustness has been proposed and implemented in a 28-nm high-k/metal gate CMOS process. An additional p-type ESD implantation layer was added into the pMOS to realize the proposed device. The experimental results show that the proposed device has the advantages of high ESD robustness, low holding voltage, low parasitic capacitance, and good latchup immunity. With better performances, the proposed device was more suitable for ESD protection in a sub-50-nm CMOS process.
KW - Electrostatic discharge (ESD)
KW - pMOS
KW - silicon-controlled rectifier (SCR)
UR - http://www.scopus.com/inward/record.url?scp=85027919480&partnerID=8YFLogxK
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U2 - 10.1109/TED.2015.2396946
DO - 10.1109/TED.2015.2396946
M3 - Article
AN - SCOPUS:85027919480
VL - 62
SP - 1349
EP - 1352
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 4
M1 - 7038138
ER -