Improving Edge Dead Domain and Endurance in Scaled HfZrOxFeRAM

Yu De Lin; Po Chun Yeh; Ying Tsan Tang; Jian Wei Su; Hsin Yun Yang; Yu Hao Chen; Chih Pin Lin; Po Shao Yeh; Jui Chin Chen; Pei Jer Tzeng; Min Hung Lee; Tuo Hung Hou; Shyh Shyuan Sheu; Wei Chung Lo; Chih I. Wu

doi:10.1109/IEDM19574.2021.9720692

Improving Edge Dead Domain and Endurance in Scaled HfZrO_xFeRAM

Yu De Lin, Po Chun Yeh, Ying Tsan Tang, Jian Wei Su, Hsin Yun Yang, Yu Hao Chen, Chih Pin Lin, Po Shao Yeh, Jui Chin Chen, Pei Jer Tzeng, Min Hung Lee, Tuo Hung Hou^*, Shyh Shyuan Sheu, Wei Chung Lo, Chih I. Wu

^*此作品的通信作者

光電工程學士學位學程

研究成果: 書貢獻/報告類型 › 會議論文篇章

21 引文斯高帕斯（Scopus）

摘要

Scaling in area and voltage and its interplay with reliability of metal-ferroelectric-metal (MFM) capacitors are explored for scalable embedded FeRAM technology below 2× nm node. Size-dependent degradation in ferroelectricity due to the edge dead domains is identified both experimentally and theoretically. Optimization strategies including edge interface and work function tuning are detailed. The scaled MFM shows promising potential for achieving high maximum P_{rm{r}} (36 \mu rm{C}/\text{cm}{2}), small area (0.16 \mu rm{m}{2}), excellent reliability (> 10{11}) cycles; retention > 10 years at 85°C), a low operating voltage of 1.7 V, and a high array yield (100 % in lkb test macro).

原文	英語
主出版物標題	2021 IEEE International Electron Devices Meeting, IEDM 2021
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	6.4.1-6.4.4
ISBN（電子）	9781665425728
DOIs	https://doi.org/10.1109/IEDM19574.2021.9720692
出版狀態	已發佈 - 2021
事件	2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, 美国持續時間: 2021 12月 11 → 2021 12月 16

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
卷	2021-December
ISSN（列印）	0163-1918

會議

會議	2021 IEEE International Electron Devices Meeting, IEDM 2021
國家/地區	美国
城市	San Francisco
期間	2021/12/11 → 2021/12/16

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

存取文件

10.1109/IEDM19574.2021.9720692

其它文件與鏈接

引用此

Lin, Y. D., Yeh, P. C., Tang, Y. T., Su, J. W., Yang, H. Y., Chen, Y. H., Lin, C. P., Yeh, P. S., Chen, J. C., Tzeng, P. J., Lee, M. H., Hou, T. H., Sheu, S. S., Lo, W. C., & Wu, C. I. (2021). Improving Edge Dead Domain and Endurance in Scaled HfZrO_xFeRAM. 於 2021 IEEE International Electron Devices Meeting, IEDM 2021 (頁 6.4.1-6.4.4). (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2021-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19574.2021.9720692

Improving Edge Dead Domain and Endurance in Scaled HfZrO_xFeRAM. / Lin, Yu De; Yeh, Po Chun; Tang, Ying Tsan 等.
2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 6.4.1-6.4.4 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2021-December).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Lin, YD, Yeh, PC, Tang, YT, Su, JW, Yang, HY, Chen, YH, Lin, CP, Yeh, PS, Chen, JC, Tzeng, PJ, Lee, MH, Hou, TH, Sheu, SS, Lo, WC & Wu, CI 2021, Improving Edge Dead Domain and Endurance in Scaled HfZrO_xFeRAM. 於 2021 IEEE International Electron Devices Meeting, IEDM 2021. Technical Digest - International Electron Devices Meeting, IEDM, 卷 2021-December, Institute of Electrical and Electronics Engineers Inc., 頁 6.4.1-6.4.4, 2021 IEEE International Electron Devices Meeting, IEDM 2021, San Francisco, 美国, 2021/12/11. https://doi.org/10.1109/IEDM19574.2021.9720692

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abstract = "Scaling in area and voltage and its interplay with reliability of metal-ferroelectric-metal (MFM) capacitors are explored for scalable embedded FeRAM technology below 2× nm node. Size-dependent degradation in ferroelectricity due to the edge dead domains is identified both experimentally and theoretically. Optimization strategies including edge interface and work function tuning are detailed. The scaled MFM shows promising potential for achieving high maximum P_{rm{r}} (36 \mu rm{C}/\text{cm}{2}), small area (0.16 \mu rm{m}{2}), excellent reliability (> 10{11}) cycles; retention > 10 years at 85°C), a low operating voltage of 1.7 V, and a high array yield (100 % in lkb test macro).",

author = "Lin, {Yu De} and Yeh, {Po Chun} and Tang, {Ying Tsan} and Su, {Jian Wei} and Yang, {Hsin Yun} and Chen, {Yu Hao} and Lin, {Chih Pin} and Yeh, {Po Shao} and Chen, {Jui Chin} and Tzeng, {Pei Jer} and Lee, {Min Hung} and Hou, {Tuo Hung} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Wu, {Chih I.}",

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AU - Chen, Yu Hao

AU - Lin, Chih Pin

AU - Yeh, Po Shao

AU - Chen, Jui Chin

AU - Tzeng, Pei Jer

AU - Lee, Min Hung

AU - Hou, Tuo Hung

AU - Sheu, Shyh Shyuan

AU - Lo, Wei Chung

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