@inproceedings{a0dfe24454374aa5a27639b0e70fc0f4,
title = "Improving Edge Dead Domain and Endurance in Scaled HfZrOxFeRAM",
abstract = "Scaling in area and voltage and its interplay with reliability of metal-ferroelectric-metal (MFM) capacitors are explored for scalable embedded FeRAM technology below 2× nm node. Size-dependent degradation in ferroelectricity due to the edge dead domains is identified both experimentally and theoretically. Optimization strategies including edge interface and work function tuning are detailed. The scaled MFM shows promising potential for achieving high maximum P_{rm{r}} (36 \mu rm{C}/\text{cm}{2}), small area (0.16 \mu rm{m}{2}), excellent reliability (> 10{11}) cycles; retention > 10 years at 85°C), a low operating voltage of 1.7 V, and a high array yield (100 % in lkb test macro).",
author = "Lin, {Yu De} and Yeh, {Po Chun} and Tang, {Ying Tsan} and Su, {Jian Wei} and Yang, {Hsin Yun} and Chen, {Yu Hao} and Lin, {Chih Pin} and Yeh, {Po Shao} and Chen, {Jui Chin} and Tzeng, {Pei Jer} and Lee, {Min Hung} and Hou, {Tuo Hung} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Wu, {Chih I.}",
note = "Funding Information: ACKNOWLEDGMENT This work was supported the Ministry of Economic Affairs of Taiwan and the Ministry of Science and Technology of Taiwan. REFERENCES [1] S. D{\"u}nkel et al., {"}A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond,{"} in IEDM Tech. Dig., 2017, pp. 19.7.1-19.7.4. [2] J. Okuno et al., {"}SoC compatible 1T1C FeRAM memory array based on ferroelectric Hf0.5Zr0.5O2,{"} in VLSI Tech. Dig., 2020, TF2.1. [3] S. -C. Chang et al., {"}Anti-ferroelectric HfxZr1-xO2 capacitors for high-density 3-D embedded-DRAM,{"} in IEDM Tech. Dig., 2020, pp. 28.1.1-28.1.4. [4] T. Francois et al., {"}Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications,{"} in IEDM Tech. Dig., 2019, pp. 15.7.1-15.7.4 [5] J. Hur et al., {"}Interplay of switching characteristics, cycling endurance and multilevel retention of ferroelectric capacitor,{"} in IEDM Tech. Dig., 2020, pp. 39.5.1-39.5.4. [6] Y.D. Lin et al., {"}3D scalable, wake-up free, and highly reliable FRAM technology with stress-engineered HfZrOx,{"} in IEDM Tech. Dig., 2016, pp. 11.6.1-11.6.4. [7] L.-H. Liang, X. M. You, H. S. Ma, and Y. G. Wei., {"}Interface energy and its influence on interface fracture between metal and ceramic thin films in nanoscale,{"} J. Appl. Phys, vol. 108, 084317, 2010. [8] R. Materlik, C. K{\"u}nneth, and A. Kersch, {"}The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model,{"} J. Appl. Phys., vol. 117, 134109, 2015. [9] Y.T. Tang et al., {"}A comprehensive kinetical modeling of polymorphic phase distribution of ferroelectric-dielectrics and interfacial energy effects on negative capacitance FETs,{"} in VLSI Tech. Dig., 2019, pp. T222 - T223. [10] A. J. Schwartz, M. Kumar, B. L. Adams, and D. P. Field, {"}Electron backscatter diffraction in materials science,{"} 2000, New York: Kluwer Academic. Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Electron Devices Meeting, IEDM 2021 ; Conference date: 11-12-2021 Through 16-12-2021",
year = "2021",
doi = "10.1109/IEDM19574.2021.9720692",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "6.4.1--6.4.4",
booktitle = "2021 IEEE International Electron Devices Meeting, IEDM 2021",
}