Improvement on properties and reliability of ultra-thin silicon oxide (3-5 nm) grown by microwave plasma afterglow at the low temperatures using mixtures of N2O and O2

C. W. Leu*, Shu-Fen Hu, P. C. Chen, H. L. Hwang

*此作品的通信作者

研究成果: 雜誌貢獻會議論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

Ultra-thin silicon oxides (4 nm) with excellent quality were grown by using mixture of N2O and O2 plasma in a microwave afterglow plasma oxidation system. The electrical breakdown fields of oxide grown with a mixture of N2O and O2 plasma are comparable with that of conventional thermally grown oxides. The interface state densities are lower and charge to breakdown are higher than that of oxide grown in traditional thermal furnace. The optimal interface state density (approx. 3 × 1010 cm-2 eV-1) could be achieved by tuning the N2O/O2 ratio. The oxides grown with a lower microwave power and a lower gas flow rate possess lower interface state density. Higher value of charge to breakdown could be found in oxides grown at low gas flow rate. Resistance to tunneling current stress increased as the ratio of N2O/O2 in plasma is higher. All these improvements could be attributed to the incorporation of nitrogen into oxides grown at lower temperatures in our novel system.

原文英語
頁(從 - 到)322-326
頁數5
期刊Applied Surface Science
142
發行號1
DOIs
出版狀態已發佈 - 1999 四月
事件Proceedings of the 1998 9th International Conference on Solid Films and Surfaces, ICSFS-9 - Copenhagen, Denmark
持續時間: 1998 七月 61998 七月 10

ASJC Scopus subject areas

  • 化學 (全部)
  • 凝聚態物理學
  • 物理與天文學 (全部)
  • 表面和介面
  • 表面、塗料和薄膜

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