Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping Electrode

K. T. Chen; C. Y. Liao; C. Lo; H. Y. Chen; G. Y. Siang; S. Liu; S. C. Chang; M. H. Liao; S. T. Chang; M. H. Lee

doi:10.1109/EDTM.2019.8731272

Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO₂ Capacitor with Molybdenum Capping Electrode

K. T. Chen, C. Y. Liao, C. Lo, H. Y. Chen, G. Y. Siang, S. Liu, S. C. Chang, M. H. Liao, S. T. Chang, M. H. Lee^*

^*此作品的通信作者

光電工程學士學位學程

研究成果: 書貢獻/報告類型 › 會議論文篇章

25 引文斯高帕斯（Scopus）

摘要

The capping metal plays an important role on HfZrO² (HZO) crystallization for ferroelectric phase. The Mo top electrode MIM capacitor is demonstrated with high remnant polarization and endurance as compared with TaN electrode. The optimized data retention for 500°C annealing device presents (>30) μC/cm² up to 2×10⁴ sec and slightly degradation extrapolated to 3×10⁸ sec (10 years). The Mo electrode exhibits higher 2P_r and excellent endurance performance ((>10)⁵ cycles) as compared with that of TaN electrode. It is beneficial for promising ultra-thin FE-HZO as the guidelines for low-power CMOS/memory applications.

原文	英語
主出版物標題	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	62-64
頁數	3
ISBN（電子）	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731272
出版狀態	已發佈 - 2019 3月
事件	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, 新加坡持續時間: 2019 3月 12 → 2019 3月 15

出版系列

名字	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

會議

會議	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
國家/地區	新加坡
城市	Singapore
期間	2019/03/12 → 2019/03/15

ASJC Scopus subject areas

電氣與電子工程
電子、光磁材料
儀器
硬體和架構

存取文件

10.1109/EDTM.2019.8731272

其它文件與鏈接

引用此

Chen, K. T., Liao, C. Y., Lo, C., Chen, H. Y., Siang, G. Y., Liu, S., Chang, S. C., Liao, M. H., Chang, S. T., & Lee, M. H. (2019). Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO₂ Capacitor with Molybdenum Capping Electrode. 於 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (頁 62-64). 文章 8731272 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731272

Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO₂ Capacitor with Molybdenum Capping Electrode. / Chen, K. T.; Liao, C. Y.; Lo, C. 等.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 62-64 8731272 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Chen, KT, Liao, CY, Lo, C, Chen, HY, Siang, GY, Liu, S, Chang, SC, Liao, MH, Chang, ST & Lee, MH 2019, Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO₂ Capacitor with Molybdenum Capping Electrode. 於 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731272, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., 頁 62-64, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, 新加坡, 2019/03/12. https://doi.org/10.1109/EDTM.2019.8731272

Chen KT, Liao CY, Lo C, Chen HY, Siang GY, Liu S 等. Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO₂ Capacitor with Molybdenum Capping Electrode. 於 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 62-64. 8731272. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). doi: 10.1109/EDTM.2019.8731272

Chen, K. T. ; Liao, C. Y. ; Lo, C. 等. / Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO₂ Capacitor with Molybdenum Capping Electrode. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 頁 62-64 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

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title = "Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping Electrode",

abstract = "The capping metal plays an important role on HfZrO2 (HZO) crystallization for ferroelectric phase. The Mo top electrode MIM capacitor is demonstrated with high remnant polarization and endurance as compared with TaN electrode. The optimized data retention for 500°C annealing device presents (>30) μC/cm2 up to 2×104 sec and slightly degradation extrapolated to 3×108 sec (10 years). The Mo electrode exhibits higher 2Pr and excellent endurance performance ((>10)5 cycles) as compared with that of TaN electrode. It is beneficial for promising ultra-thin FE-HZO as the guidelines for low-power CMOS/memory applications.",

author = "Chen, {K. T.} and Liao, {C. Y.} and C. Lo and Chen, {H. Y.} and Siang, {G. Y.} and S. Liu and Chang, {S. C.} and Liao, {M. H.} and Chang, {S. T.} and Lee, {M. H.}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",

year = "2019",

month = mar,

doi = "10.1109/EDTM.2019.8731272",

language = "English",

series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "62--64",

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AU - Chen, K. T.

AU - Liao, C. Y.

AU - Lo, C.

AU - Chen, H. Y.

AU - Siang, G. Y.

AU - Liu, S.

AU - Chang, S. C.

AU - Liao, M. H.

AU - Chang, S. T.

AU - Lee, M. H.

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AB - The capping metal plays an important role on HfZrO2 (HZO) crystallization for ferroelectric phase. The Mo top electrode MIM capacitor is demonstrated with high remnant polarization and endurance as compared with TaN electrode. The optimized data retention for 500°C annealing device presents (>30) μC/cm2 up to 2×104 sec and slightly degradation extrapolated to 3×108 sec (10 years). The Mo electrode exhibits higher 2Pr and excellent endurance performance ((>10)5 cycles) as compared with that of TaN electrode. It is beneficial for promising ultra-thin FE-HZO as the guidelines for low-power CMOS/memory applications.

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