Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping Electrode

K. T. Chen, C. Y. Liao, C. Lo, H. Y. Chen, G. Y. Siang, S. Liu, S. C. Chang, M. H. Liao, S. T. Chang, M. H. Lee*

*此作品的通信作者

    研究成果: 書貢獻/報告類型會議論文篇章

    7 引文 斯高帕斯(Scopus)

    摘要

    The capping metal plays an important role on HfZrO2 (HZO) crystallization for ferroelectric phase. The Mo top electrode MIM capacitor is demonstrated with high remnant polarization and endurance as compared with TaN electrode. The optimized data retention for 500°C annealing device presents (>30) μC/cm2 up to 2×104 sec and slightly degradation extrapolated to 3×108 sec (10 years). The Mo electrode exhibits higher 2Pr and excellent endurance performance ((>10)5 cycles) as compared with that of TaN electrode. It is beneficial for promising ultra-thin FE-HZO as the guidelines for low-power CMOS/memory applications.

    原文英語
    主出版物標題2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
    發行者Institute of Electrical and Electronics Engineers Inc.
    頁面62-64
    頁數3
    ISBN(電子)9781538665084
    DOIs
    出版狀態已發佈 - 2019 三月
    事件2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, 新加坡
    持續時間: 2019 三月 122019 三月 15

    出版系列

    名字2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

    會議

    會議2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
    國家/地區新加坡
    城市Singapore
    期間2019/03/122019/03/15

    ASJC Scopus subject areas

    • 電氣與電子工程
    • 電子、光磁材料
    • 儀器
    • 硬體和架構

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