Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode

C. H. Cheng*, H. C. Pan, C. C. Huang, C. P. Chou, C. N. Hsiao, J. Hu, M. Hwang, T. Arikado, S. P. McAlister, Albert Chin

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

18 引文 斯高帕斯(Scopus)

摘要

We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 × 10-6 A/cm2 (at - 1 V) at a 28 fF/ μm2 capacitance density.

原文英語
頁(從 - 到)1105-1107
頁數3
期刊IEEE Electron Device Letters
29
發行號10
DOIs
出版狀態已發佈 - 2008

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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