TY - JOUR
T1 - Improvement of quantum efficiency in green light-emitting diodes with pre-TMIn flow treatment
AU - Lee, Ya Ju
AU - Chen, Yi Ching
AU - Lu, Tien Chang
PY - 2011/6/8
Y1 - 2011/6/8
N2 - The effects of pre-trimethlyindium (TMIn) flow on the improved electrical characteristics and highly stable temperature properties of InGaN green light-emitting diodes (LEDs) are discussed. For the LED sample with a pre-TMIn flow treatment, the tunnelling of injected carriers associated with threading defects is significantly reduced, which promotes the diffusion-recombination of injected carriers, as well as the overall emission efficiency of the LED. In addition, the pre-TMIn flow treatment evidently reduces the dependence of external quantum efficiency on temperature and efficiency droop of green LEDs. As a result, we conclude that the pre-TMIn flow treatment is a promising scheme for the improvement of output performance of InGaN-based green LEDs.
AB - The effects of pre-trimethlyindium (TMIn) flow on the improved electrical characteristics and highly stable temperature properties of InGaN green light-emitting diodes (LEDs) are discussed. For the LED sample with a pre-TMIn flow treatment, the tunnelling of injected carriers associated with threading defects is significantly reduced, which promotes the diffusion-recombination of injected carriers, as well as the overall emission efficiency of the LED. In addition, the pre-TMIn flow treatment evidently reduces the dependence of external quantum efficiency on temperature and efficiency droop of green LEDs. As a result, we conclude that the pre-TMIn flow treatment is a promising scheme for the improvement of output performance of InGaN-based green LEDs.
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U2 - 10.1088/0022-3727/44/22/224015
DO - 10.1088/0022-3727/44/22/224015
M3 - Article
AN - SCOPUS:79956067720
SN - 0022-3727
VL - 44
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 22
M1 - 224015
ER -