Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition

Jun Dao Luo, He Xin Zhang, Zheng Ying Wang, Siang Sheng Gu, Yun Tien Yeh, Hao Tung Chung, Kai Chi Chuang, Chan Yu Liao, Wei Shuo Li, Yi Shao Li, Kai Shin Li, Min Hung Lee, Huang Chung Cheng

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

Modulating the water pulse time during thermal atomic layer deposition is an effective approach to enhancing the ferroelectric properties of undoped HfO2 thin films. Through grazing incidence X-ray diffraction (GI-XRD), it was observed that a shorter water pulse time can inhibit formation of the monoclinic phase and thereby obtain good remanent polarization. Transmission electron microscopy (TEM) images and GIXRD analysis were used to reveal the crystallization conditions of the undoped HfO2 thin films. By modulating the water pulse time during deposition of all samples, no impurities were found in these films via X-ray photoelectron spectroscopy. Moreover, samples with shorter water pulse times revealed lower binding energy and higher leakage current. However, electric measurement results of samples with shorter water pulse times revealed a higher remanent polarization of approximately 9 μC cm-2 and a coercive field of ∼1.95 MV cm-1 compared with other samples. After endurance testing, the films lasted for more than 108 cycles at 2.25 V, so they are ideally suited to low-power ferroelectric CMOS devices and non-volatile memory applications.

原文英語
文章編號SDDE07
期刊Japanese Journal of Applied Physics
58
發行號SD
DOIs
出版狀態已發佈 - 2019 一月 1

ASJC Scopus subject areas

  • 工程 (全部)
  • 物理與天文學 (全部)

指紋

深入研究「Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition」主題。共同形成了獨特的指紋。

引用此