Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °c

Hsiao Hsuan Hsu; Yu Chien Chiu; Ping Chiou; Chun Hu Cheng

doi:10.1016/j.jallcom.2014.12.061

Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °c

Hsiao Hsuan Hsu, Yu Chien Chiu, Ping Chiou, Chun Hu Cheng^*

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

13 引文斯高帕斯（Scopus）

摘要

In this works, we investigated a Ti-O material system integrating with InGaZnO thin film transistor. The Ti-O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiO_x/IGZO TFT reaches a smaller sub-threshold swing (SS) of 125 mV/decade and a higher field effect mobility of 61 cm²/V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.

原文	英語
頁（從 - 到）	S133-S136
期刊	Journal of Alloys and Compounds
卷	643
發行號	S1
DOIs	https://doi.org/10.1016/j.jallcom.2014.12.061
出版狀態	已發佈 - 2015 6月 14

ASJC Scopus subject areas

材料力學
機械工業
金屬和合金
材料化學

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Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °c. / Hsu, Hsiao Hsuan; Chiu, Yu Chien; Chiou, Ping 等.
於: Journal of Alloys and Compounds, 卷 643, 編號 S1, 14.06.2015, p. S133-S136.

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

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title = "Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °c",

abstract = "In this works, we investigated a Ti-O material system integrating with InGaZnO thin film transistor. The Ti-O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiOx/IGZO TFT reaches a smaller sub-threshold swing (SS) of 125 mV/decade and a higher field effect mobility of 61 cm2/V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.",

keywords = "Flexible electronics, InGaZnO, Thin film transistor, Titanium oxide",

author = "Hsu, {Hsiao Hsuan} and Chiu, {Yu Chien} and Ping Chiou and Cheng, {Chun Hu}",

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doi = "10.1016/j.jallcom.2014.12.061",

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T1 - Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °c

AU - Hsu, Hsiao Hsuan

AU - Chiu, Yu Chien

AU - Chiou, Ping

AU - Cheng, Chun Hu

PY - 2015/6/14

Y1 - 2015/6/14

N2 - In this works, we investigated a Ti-O material system integrating with InGaZnO thin film transistor. The Ti-O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiOx/IGZO TFT reaches a smaller sub-threshold swing (SS) of 125 mV/decade and a higher field effect mobility of 61 cm2/V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.

AB - In this works, we investigated a Ti-O material system integrating with InGaZnO thin film transistor. The Ti-O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiOx/IGZO TFT reaches a smaller sub-threshold swing (SS) of 125 mV/decade and a higher field effect mobility of 61 cm2/V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.

KW - Flexible electronics

KW - InGaZnO

KW - Thin film transistor

KW - Titanium oxide

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Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °c

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