Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °c

Hsiao Hsuan Hsu, Yu Chien Chiu, Ping Chiou, Chun Hu Cheng

研究成果: 雜誌貢獻文章

13 引文 斯高帕斯(Scopus)

摘要

In this works, we investigated a Ti-O material system integrating with InGaZnO thin film transistor. The Ti-O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiOx/IGZO TFT reaches a smaller sub-threshold swing (SS) of 125 mV/decade and a higher field effect mobility of 61 cm2/V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.

原文英語
頁(從 - 到)S133-S136
期刊Journal of Alloys and Compounds
643
發行號S1
DOIs
出版狀態已發佈 - 2015 六月 14

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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