Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °c

Hsiao Hsuan Hsu, Yu Chien Chiu, Ping Chiou, Chun Hu Cheng

研究成果: 雜誌貢獻文章

11 引文 (Scopus)

摘要

In this works, we investigated a Ti-O material system integrating with InGaZnO thin film transistor. The Ti-O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiOx/IGZO TFT reaches a smaller sub-threshold swing (SS) of 125 mV/decade and a higher field effect mobility of 61 cm2/V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.

原文英語
頁(從 - 到)S133-S136
期刊Journal of Alloys and Compounds
643
發行號S1
DOIs
出版狀態已發佈 - 2015 六月 14

指紋

Thin film devices
Titanium oxides
Dielectric properties
Electric properties
Gate dielectrics
Bending tests
Oxygen vacancies
Thin film transistors
Enthalpy
Tuning
Degradation
Temperature
Electric potential
titanium dioxide

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

引用此文

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title = "Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °c",
abstract = "In this works, we investigated a Ti-O material system integrating with InGaZnO thin film transistor. The Ti-O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiOx/IGZO TFT reaches a smaller sub-threshold swing (SS) of 125 mV/decade and a higher field effect mobility of 61 cm2/V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.",
keywords = "Flexible electronics, InGaZnO, Thin film transistor, Titanium oxide",
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T1 - Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °c

AU - Hsu, Hsiao Hsuan

AU - Chiu, Yu Chien

AU - Chiou, Ping

AU - Cheng, Chun Hu

PY - 2015/6/14

Y1 - 2015/6/14

N2 - In this works, we investigated a Ti-O material system integrating with InGaZnO thin film transistor. The Ti-O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiOx/IGZO TFT reaches a smaller sub-threshold swing (SS) of 125 mV/decade and a higher field effect mobility of 61 cm2/V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.

AB - In this works, we investigated a Ti-O material system integrating with InGaZnO thin film transistor. The Ti-O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiOx/IGZO TFT reaches a smaller sub-threshold swing (SS) of 125 mV/decade and a higher field effect mobility of 61 cm2/V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.

KW - Flexible electronics

KW - InGaZnO

KW - Thin film transistor

KW - Titanium oxide

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