Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates

Y. J. Lee; T. C. Hsu; H. C. Kuo; S. C. Wang; Y. L. Yang; S. N. Yen; Y. T. Chu; Y. J. Shen; M. H. Hsieh; M. J. Jou; B. J. Lee

doi:10.1016/j.mseb.2005.05.019

Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates

Y. J. Lee^*, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, B. J. Lee

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

65 引文斯高帕斯（Scopus）

摘要

InGaN/GaN multi-quantum wells near ultraviolet light-emitting diodes (LEDs) were fabricated on a patterned sapphire substrate (PSS) with parallel stripe along the 〈1 1̄ 0 0〉sapphire direction by using low-pressure metal-organic chemical vapor deposition (MOCVD). The forward- and reverse-bias electrical characteristics of the stripe PSS LEDs are, respectively, similar and better than those of conventional LEDs on sapphire substrate. The output power of the epoxy package of stripe PSS LED was 20% higher than that of the conventional LEDs. The enhancement of output power is due not only to the reduction of dislocation density but also to the release of the guided light in LEDs by the geometric shape of the stripe PSS, according to the ray-tracing analysis.

原文	英語
頁（從 - 到）	184-187
頁數	4
期刊	Materials Science and Engineering: B
卷	122
發行號	3
DOIs	https://doi.org/10.1016/j.mseb.2005.05.019
出版狀態	已發佈 - 2005 9月 25
對外發佈	是

ASJC Scopus subject areas

一般材料科學
凝聚態物理學
材料力學
機械工業

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10.1016/j.mseb.2005.05.019

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@article{24252b0733ae487ba5e77824999d57eb,

title = "Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates",

abstract = "InGaN/GaN multi-quantum wells near ultraviolet light-emitting diodes (LEDs) were fabricated on a patterned sapphire substrate (PSS) with parallel stripe along the 〈1 {\=1} 0 0〉sapphire direction by using low-pressure metal-organic chemical vapor deposition (MOCVD). The forward- and reverse-bias electrical characteristics of the stripe PSS LEDs are, respectively, similar and better than those of conventional LEDs on sapphire substrate. The output power of the epoxy package of stripe PSS LED was 20% higher than that of the conventional LEDs. The enhancement of output power is due not only to the reduction of dislocation density but also to the release of the guided light in LEDs by the geometric shape of the stripe PSS, according to the ray-tracing analysis.",

keywords = "GaN, InGaN, Patterned sapphire substrate (PSS)",

author = "Lee, {Y. J.} and Hsu, {T. C.} and Kuo, {H. C.} and Wang, {S. C.} and Yang, {Y. L.} and Yen, {S. N.} and Chu, {Y. T.} and Shen, {Y. J.} and Hsieh, {M. H.} and Jou, {M. J.} and Lee, {B. J.}",

year = "2005",

month = sep,

day = "25",

doi = "10.1016/j.mseb.2005.05.019",

language = "English",

volume = "122",

pages = "184--187",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "3",

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TY - JOUR

T1 - Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates

AU - Lee, Y. J.

AU - Hsu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

AU - Yang, Y. L.

AU - Yen, S. N.

AU - Chu, Y. T.

AU - Shen, Y. J.

AU - Hsieh, M. H.

AU - Jou, M. J.

AU - Lee, B. J.

PY - 2005/9/25

Y1 - 2005/9/25

N2 - InGaN/GaN multi-quantum wells near ultraviolet light-emitting diodes (LEDs) were fabricated on a patterned sapphire substrate (PSS) with parallel stripe along the 〈1 1̄ 0 0〉sapphire direction by using low-pressure metal-organic chemical vapor deposition (MOCVD). The forward- and reverse-bias electrical characteristics of the stripe PSS LEDs are, respectively, similar and better than those of conventional LEDs on sapphire substrate. The output power of the epoxy package of stripe PSS LED was 20% higher than that of the conventional LEDs. The enhancement of output power is due not only to the reduction of dislocation density but also to the release of the guided light in LEDs by the geometric shape of the stripe PSS, according to the ray-tracing analysis.

AB - InGaN/GaN multi-quantum wells near ultraviolet light-emitting diodes (LEDs) were fabricated on a patterned sapphire substrate (PSS) with parallel stripe along the 〈1 1̄ 0 0〉sapphire direction by using low-pressure metal-organic chemical vapor deposition (MOCVD). The forward- and reverse-bias electrical characteristics of the stripe PSS LEDs are, respectively, similar and better than those of conventional LEDs on sapphire substrate. The output power of the epoxy package of stripe PSS LED was 20% higher than that of the conventional LEDs. The enhancement of output power is due not only to the reduction of dislocation density but also to the release of the guided light in LEDs by the geometric shape of the stripe PSS, according to the ray-tracing analysis.

KW - GaN

KW - InGaN

KW - Patterned sapphire substrate (PSS)

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U2 - 10.1016/j.mseb.2005.05.019

DO - 10.1016/j.mseb.2005.05.019

M3 - Article

AN - SCOPUS:24144457521

SN - 0921-5107

VL - 122

SP - 184

EP - 187

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 3

ER -

Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates

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