Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates

Y. J. Lee*, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, B. J. Lee

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

65 引文 斯高帕斯(Scopus)

摘要

InGaN/GaN multi-quantum wells near ultraviolet light-emitting diodes (LEDs) were fabricated on a patterned sapphire substrate (PSS) with parallel stripe along the 〈1 1̄ 0 0〉sapphire direction by using low-pressure metal-organic chemical vapor deposition (MOCVD). The forward- and reverse-bias electrical characteristics of the stripe PSS LEDs are, respectively, similar and better than those of conventional LEDs on sapphire substrate. The output power of the epoxy package of stripe PSS LED was 20% higher than that of the conventional LEDs. The enhancement of output power is due not only to the reduction of dislocation density but also to the release of the guided light in LEDs by the geometric shape of the stripe PSS, according to the ray-tracing analysis.

原文英語
頁(從 - 到)184-187
頁數4
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
122
發行號3
DOIs
出版狀態已發佈 - 2005 9月 25
對外發佈

ASJC Scopus subject areas

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

指紋

深入研究「Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates」主題。共同形成了獨特的指紋。

引用此