Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy

Y. J. Lee, H. C. Tseng, H. C. Kuo, S. C. Wang, C. W. Chang, T. C. Hsu, Y. L. Yang, M. H. Hsieh, M. J. Jou, B. J. Lee

研究成果: 雜誌貢獻文章

16 引文 斯高帕斯(Scopus)

摘要

Quaternary AlGaInP light-emitting diodes (LEDs) operating at a wavelength of 630 nm with a stripe-patterned omni-directional reflector (ODR) were fabricated. It is demonstrated that the geometrical shape of stripe-patterned structure improves the light extraction efficiency by increasing the extraction of guided light. The optical and electrical characteristics of stripe-patterned ODR LEDs are presented and compared to typical ODR and distributed Bragg reflector (DBR) LEDs with the same epitaxial structure and emitting wavelength. It is shown that the output power of the stripe-patterned ODR LED exceeds that of the typical ODR and DBR LEDs by a factor of 1.15 and 2 times, respectively, and with an acceptable forward voltage of about 2.2 V.

原文英語
頁(從 - 到)2532-2534
頁數3
期刊IEEE Photonics Technology Letters
17
發行號12
DOIs
出版狀態已發佈 - 2005 十二月 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Lee, Y. J., Tseng, H. C., Kuo, H. C., Wang, S. C., Chang, C. W., Hsu, T. C., Yang, Y. L., Hsieh, M. H., Jou, M. J., & Lee, B. J. (2005). Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy. IEEE Photonics Technology Letters, 17(12), 2532-2534. https://doi.org/10.1109/LPT.2005.859147