Improvement in electrical characteristics of HfO                         2                          gate dielectrics treated by remote NH                         3                          plasma

Li Tien Huang; Ming Lun Chang; Jhih Jie Huang; Hsin Chih Lin; Chin Lung Kuo; Min Hung Lee; Chee Wee Liu; Miin Jang Chen

doi:10.1016/j.apsusc.2012.11.097

Improvement in electrical characteristics of HfO ₂ gate dielectrics treated by remote NH ₃ plasma

Li Tien Huang, Ming Lun Chang, Jhih Jie Huang, Hsin Chih Lin, Chin Lung Kuo, Min Hung Lee, Chee Wee Liu, Miin Jang Chen^*

^*此作品的通信作者

光電工程學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

12 引文斯高帕斯（Scopus）

摘要

We report the structural and electrical characteristics of hafnium oxide (HfO ₂ ) gate dielectrics treated by remote NH ₃ plasma under various radio-frequency (RF) powers at a low temperature. Significant increase of effective dielectric constant (k _eff ), decrease of capacitance equivalent thickness (CET), reduction in leakage current density, and suppression of the interfacial layer thickness were observed with the increase of the RF power in the remote NH ₃ plasma treatment. The effects of hydrogen passivation and depassivation on the HfO ₂ /Si interface due to the remote NH ₃ plasma treatment were also observed by the variation of photoluminescence (PL) intensity, indicating that the PL measurement is applicable to probe the interfacial properties. An ultrathin interfacial layer (∼0.3 nm), a high k _eff , (20.9), a low leakage current density (9 × 10 ^-6 A/cm ² ), and a low CET (1.9 nm) in the nitrided HfO ₂ film were achieved, demonstrating that the nitridation process using remote NH ₃ plasma under a high RF power at a low temperature is a promising way to improve in electrical properties of high-K gate dielectrics.

原文	英語
頁（從 - 到）	89-93
頁數	5
期刊	Applied Surface Science
卷	266
DOIs	https://doi.org/10.1016/j.apsusc.2012.11.097
出版狀態	已發佈 - 2013 2月 1

ASJC Scopus subject areas

一般化學
凝聚態物理學
一般物理與天文學
表面和介面
表面、塗料和薄膜

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10.1016/j.apsusc.2012.11.097

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引用此

Huang, L. T., Chang, M. L., Huang, J. J., Lin, H. C., Kuo, C. L., Lee, M. H., Liu, C. W., & Chen, M. J. (2013). Improvement in electrical characteristics of HfO ₂ gate dielectrics treated by remote NH ₃ plasma Applied Surface Science, 266, 89-93. https://doi.org/10.1016/j.apsusc.2012.11.097

Improvement in electrical characteristics of HfO ₂ gate dielectrics treated by remote NH ₃ plasma . / Huang, Li Tien; Chang, Ming Lun; Huang, Jhih Jie 等.
於: Applied Surface Science, 卷 266, 01.02.2013, p. 89-93.

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

Huang, LT, Chang, ML, Huang, JJ, Lin, HC, Kuo, CL, Lee, MH, Liu, CW & Chen, MJ 2013, ' Improvement in electrical characteristics of HfO ₂ gate dielectrics treated by remote NH ₃ plasma ', Applied Surface Science, 卷 266, 頁 89-93. https://doi.org/10.1016/j.apsusc.2012.11.097

Huang LT, Chang ML, Huang JJ, Lin HC, Kuo CL, Lee MH 等. Improvement in electrical characteristics of HfO ₂ gate dielectrics treated by remote NH ₃ plasma Applied Surface Science. 2013 2月 1;266:89-93. doi: 10.1016/j.apsusc.2012.11.097

@article{091017b05413422a8438c52a9fdc7a94,

title = " Improvement in electrical characteristics of HfO 2 gate dielectrics treated by remote NH 3 plasma ",

abstract = " We report the structural and electrical characteristics of hafnium oxide (HfO 2 ) gate dielectrics treated by remote NH 3 plasma under various radio-frequency (RF) powers at a low temperature. Significant increase of effective dielectric constant (k eff ), decrease of capacitance equivalent thickness (CET), reduction in leakage current density, and suppression of the interfacial layer thickness were observed with the increase of the RF power in the remote NH 3 plasma treatment. The effects of hydrogen passivation and depassivation on the HfO 2 /Si interface due to the remote NH 3 plasma treatment were also observed by the variation of photoluminescence (PL) intensity, indicating that the PL measurement is applicable to probe the interfacial properties. An ultrathin interfacial layer (∼0.3 nm), a high k eff , (20.9), a low leakage current density (9 × 10 -6 A/cm 2 ), and a low CET (1.9 nm) in the nitrided HfO 2 film were achieved, demonstrating that the nitridation process using remote NH 3 plasma under a high RF power at a low temperature is a promising way to improve in electrical properties of high-K gate dielectrics.",

keywords = "Atomic layer deposition, Hafnium oxide, Nitridation, Remote plasma",

author = "Huang, {Li Tien} and Chang, {Ming Lun} and Huang, {Jhih Jie} and Lin, {Hsin Chih} and Kuo, {Chin Lung} and Lee, {Min Hung} and Liu, {Chee Wee} and Chen, {Miin Jang}",

note = "Funding Information: This work was financially supported by the Taiwan Semiconductor Manufacturing Company and National Science Council in Taiwan under contract number NSC 100-2120-M-002-014, NSC-101-2120-M-002-010, and NSC-101-2218-E-002-010.",

year = "2013",

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doi = "10.1016/j.apsusc.2012.11.097",

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pages = "89--93",

journal = "Applied Surface Science",

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T1 - Improvement in electrical characteristics of HfO 2 gate dielectrics treated by remote NH 3 plasma

AU - Huang, Li Tien

AU - Chang, Ming Lun

AU - Huang, Jhih Jie

AU - Lin, Hsin Chih

AU - Kuo, Chin Lung

AU - Lee, Min Hung

AU - Liu, Chee Wee

AU - Chen, Miin Jang

N1 - Funding Information: This work was financially supported by the Taiwan Semiconductor Manufacturing Company and National Science Council in Taiwan under contract number NSC 100-2120-M-002-014, NSC-101-2120-M-002-010, and NSC-101-2218-E-002-010.

PY - 2013/2/1

Y1 - 2013/2/1

N2 - We report the structural and electrical characteristics of hafnium oxide (HfO 2 ) gate dielectrics treated by remote NH 3 plasma under various radio-frequency (RF) powers at a low temperature. Significant increase of effective dielectric constant (k eff ), decrease of capacitance equivalent thickness (CET), reduction in leakage current density, and suppression of the interfacial layer thickness were observed with the increase of the RF power in the remote NH 3 plasma treatment. The effects of hydrogen passivation and depassivation on the HfO 2 /Si interface due to the remote NH 3 plasma treatment were also observed by the variation of photoluminescence (PL) intensity, indicating that the PL measurement is applicable to probe the interfacial properties. An ultrathin interfacial layer (∼0.3 nm), a high k eff , (20.9), a low leakage current density (9 × 10 -6 A/cm 2 ), and a low CET (1.9 nm) in the nitrided HfO 2 film were achieved, demonstrating that the nitridation process using remote NH 3 plasma under a high RF power at a low temperature is a promising way to improve in electrical properties of high-K gate dielectrics.

AB - We report the structural and electrical characteristics of hafnium oxide (HfO 2 ) gate dielectrics treated by remote NH 3 plasma under various radio-frequency (RF) powers at a low temperature. Significant increase of effective dielectric constant (k eff ), decrease of capacitance equivalent thickness (CET), reduction in leakage current density, and suppression of the interfacial layer thickness were observed with the increase of the RF power in the remote NH 3 plasma treatment. The effects of hydrogen passivation and depassivation on the HfO 2 /Si interface due to the remote NH 3 plasma treatment were also observed by the variation of photoluminescence (PL) intensity, indicating that the PL measurement is applicable to probe the interfacial properties. An ultrathin interfacial layer (∼0.3 nm), a high k eff , (20.9), a low leakage current density (9 × 10 -6 A/cm 2 ), and a low CET (1.9 nm) in the nitrided HfO 2 film were achieved, demonstrating that the nitridation process using remote NH 3 plasma under a high RF power at a low temperature is a promising way to improve in electrical properties of high-K gate dielectrics.

KW - Atomic layer deposition

KW - Hafnium oxide

KW - Nitridation

KW - Remote plasma

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SP - 89

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JO - Applied Surface Science

JF - Applied Surface Science

ER -

Improvement in electrical characteristics of HfO 2 gate dielectrics treated by remote NH 3 plasma

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Improvement in electrical characteristics of HfO ₂ gate dielectrics treated by remote NH ₃ plasma