Improvement in electrical characteristics of HfO 2 gate dielectrics treated by remote NH 3 plasma

Li Tien Huang, Ming Lun Chang, Jhih Jie Huang, Hsin Chih Lin, Chin Lung Kuo, Min Hung Lee, Chee Wee Liu, Miin Jang Chen

    研究成果: 雜誌貢獻期刊論文同行評審

    9 引文 斯高帕斯(Scopus)

    摘要

    We report the structural and electrical characteristics of hafnium oxide (HfO 2 ) gate dielectrics treated by remote NH 3 plasma under various radio-frequency (RF) powers at a low temperature. Significant increase of effective dielectric constant (k eff ), decrease of capacitance equivalent thickness (CET), reduction in leakage current density, and suppression of the interfacial layer thickness were observed with the increase of the RF power in the remote NH 3 plasma treatment. The effects of hydrogen passivation and depassivation on the HfO 2 /Si interface due to the remote NH 3 plasma treatment were also observed by the variation of photoluminescence (PL) intensity, indicating that the PL measurement is applicable to probe the interfacial properties. An ultrathin interfacial layer (∼0.3 nm), a high k eff , (20.9), a low leakage current density (9 × 10 -6 A/cm 2 ), and a low CET (1.9 nm) in the nitrided HfO 2 film were achieved, demonstrating that the nitridation process using remote NH 3 plasma under a high RF power at a low temperature is a promising way to improve in electrical properties of high-K gate dielectrics.

    原文英語
    頁(從 - 到)89-93
    頁數5
    期刊Applied Surface Science
    266
    DOIs
    出版狀態已發佈 - 2013 二月 1

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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