Improved stacked-diode ESD protection in nanoscale CMOS technology

Chun Yu Lin, Meng Ting Lin

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

An improved electrostatic discharge (ESD) protection design, using stacked diodes with silicon-controlled rectifier (SCR), is presented to protect the radio-frequency (RF) integrated circuits in nanoscale CMOS process. Using the stacked diodes and SCR together to form diode-triggered-SCR-like paths, the critical ESD current paths are enhanced. The test circuits of the proposed ESD protection and conventional designs are compared in silicon chip. As verified in a 0.18 µm CMOS process, the proposed design exhibits a lower clamping voltage and higher current handling ability during ESD stress conditions, and sufficiently low parasitic capacitance and leakage current during normal circuit operating conditions. Therefore, the proposed design is suitable for ESD protection of RF circuits in low-voltage CMOS process.

原文英語
文章編號20170570
期刊IEICE Electronics Express
14
發行號13
DOIs
出版狀態已發佈 - 2017

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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