Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Engineering & Materials Science

• Fluorine 66%
• Ferroelectric materials 63%
• Passivation 58%
• Field effect transistors 51%
• Capacitance 41%
• Switches 34%
• Defects 32%
• Hafnium oxides 28%
• Oxygen vacancies 24%
• Depolarization 22%
• Surface potential 21%
• Drain current 20%
• Leakage currents 17%
• Amplification 16%
• Hysteresis 15%
• Transistors 13%
• Aluminum 12%

Physics & Astronomy

• capacitance switches 100%
• fluorine 48%
• passivity 44%
• field effect transistors 37%
• engineering 35%
• defects 26%
• capacitance 25%
• hafnium oxides 21%
• depolarization 16%
• leakage 13%
• switches 13%
• transistors 12%
• hysteresis 12%
• aluminum 11%
• oxygen 9%

Chemical Compounds

• Chemical Passivation 48%
• Field Effect 47%
• Fluorine Atom 42%
• Drain Current 37%
• Hafnium Atom 28%
• Depolarization 27%
• Surface Potential 26%
• Oxide 13%
• Dioxygen 11%