Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Chun Hu Cheng; Chia Chi Fan; Hsiao Hsuan Hsu; Shih An Wang; Chun Yen Chang

doi:10.1002/pssr.201800493

Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Chun Hu Cheng^*, Chia Chi Fan, Hsiao Hsuan Hsu, Shih An Wang, Chun Yen Chang

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 通訊期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlO_x) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec⁻¹ for symmetric switch, a wide sub-60 mV (dec·swing)⁻¹ range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm⁻¹, and a high on/off current ratio of >10⁸. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlO_x to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.

原文	英語
文章編號	1800493
期刊	Physica Status Solidi - Rapid Research Letters
卷	13
發行號	2
DOIs	https://doi.org/10.1002/pssr.201800493
出版狀態	已發佈 - 2019 2月 1

ASJC Scopus subject areas

一般材料科學
凝聚態物理學

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10.1002/pssr.201800493

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引用此

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title = "Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering",

abstract = "A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.",

keywords = "aluminum-doped hafnium oxide, ferroelectrics, fluorine passivation, negative capacitance",

author = "Cheng, {Chun Hu} and Fan, {Chia Chi} and Hsu, {Hsiao Hsuan} and Wang, {Shih An} and Chang, {Chun Yen}",

note = "Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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AU - Cheng, Chun Hu

AU - Fan, Chia Chi

AU - Hsu, Hsiao Hsuan

AU - Wang, Shih An

AU - Chang, Chun Yen

PY - 2019/2/1

Y1 - 2019/2/1

N2 - A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.

AB - A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.

KW - aluminum-doped hafnium oxide

KW - ferroelectrics

KW - fluorine passivation

KW - negative capacitance

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Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

摘要

ASJC Scopus subject areas

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