Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Chun Hu Cheng, Chia Chi Fan, Hsiao Hsuan Hsu, Shih An Wang, Chun Yen Chang

研究成果: 雜誌貢獻字母同行評審

1 引文 斯高帕斯(Scopus)

摘要

A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.

原文英語
文章編號1800493
期刊Physica Status Solidi - Rapid Research Letters
13
發行號2
DOIs
出版狀態已發佈 - 2019 二月 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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