Improved lower electrode oxidation of high-k TiCeO metal-insulator-metal capacitors by using a novel plasma treatment

C. H. Cheng, H. H. Hsu, C. K. Deng, Albert Chin, C. P. Chou

研究成果: 書貢獻/報告類型會議論文篇章

摘要

We have fabricated high-κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual plasma treatment on bottom electrode. The novel plasma treatment suppresses the growth of bottom interfacial layer to reduce the degradation of capacitor performance under 400°C PDA. A low leakage current of 1.7 10-7 A/cm2 at -1 V and capacitance density of -18 fF/μm2 at 1 MHz were obtained for 21 nm thick TiCeO MIM devices; moreover, a 37 nm thick TiCeO film has a capacitance density of 11 fF/μm 2, which gives a k value of 45. Consequently, the excellent device performance is due to the combined effects of the dual plasma treatment, high-κ TiCeO dielectric and a high work-function Ir metal.

原文英語
主出版物標題ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
頁面323-333
頁數11
版本5
DOIs
出版狀態已發佈 - 2008 十二月 1
事件Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, 美国
持續時間: 2008 十月 132008 十月 15

出版系列

名字ECS Transactions
號碼5
16
ISSN(列印)1938-5862
ISSN(電子)1938-6737

其他

其他Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
國家美国
城市Honolulu, HI
期間2008/10/132008/10/15

ASJC Scopus subject areas

  • Engineering(all)

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