Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect

Zhi Wei Zheng; Hsiao Hsuan Hsu; Chun Hu Cheng; Po Chun Chen

doi:10.1002/pssr.201409039

Improved high-temperature switching characteristics of Y₂O₃/TiO_x resistive memory through carrier depletion effect

Zhi Wei Zheng
, Hsiao Hsuan Hsu
, Chun Hu Cheng^*
, Po Chun Chen

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

9 引文斯高帕斯（Scopus）

摘要

We report a stacked Y₂O₃/TiO_x resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ~300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiO_x and the related carrier depletion effect.

原文	英語
頁（從 - 到）	431-435
頁數	5
期刊	Physica Status Solidi - Rapid Research Letters
卷	8
發行號	5
DOIs	https://doi.org/10.1002/pssr.201409039
出版狀態	已發佈 - 2014 5月

ASJC Scopus subject areas

一般材料科學
凝聚態物理學

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10.1002/pssr.201409039

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引用此

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title = "Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect",

abstract = "We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of \textasciitilde{}300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect.",

keywords = "Carrier depletion, Resisitive switching, Resistive random access memories",

author = "Zheng, \{Zhi Wei\} and Hsu, \{Hsiao Hsuan\} and Cheng, \{Chun Hu\} and Chen, \{Po Chun\}",

year = "2014",

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doi = "10.1002/pssr.201409039",

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T1 - Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect

AU - Zheng, Zhi Wei

AU - Hsu, Hsiao Hsuan

AU - Cheng, Chun Hu

AU - Chen, Po Chun

PY - 2014/5

Y1 - 2014/5

N2 - We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ~300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect.

AB - We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ~300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect.

KW - Carrier depletion

KW - Resisitive switching

KW - Resistive random access memories

UR - https://www.scopus.com/pages/publications/84900439710

UR - https://www.scopus.com/pages/publications/84900439710#tab=citedBy

U2 - 10.1002/pssr.201409039

DO - 10.1002/pssr.201409039

M3 - Article

AN - SCOPUS:84900439710

SN - 1862-6254

VL - 8

SP - 431

EP - 435

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 5

ER -

Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect

摘要

ASJC Scopus subject areas

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Improved high-temperature switching characteristics of Y₂O₃/TiO_x resistive memory through carrier depletion effect