摘要
We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ~300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect.
原文 | 英語 |
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頁(從 - 到) | 431-435 |
頁數 | 5 |
期刊 | Physica Status Solidi - Rapid Research Letters |
卷 | 8 |
發行號 | 5 |
DOIs | |
出版狀態 | 已發佈 - 2014 5月 |
ASJC Scopus subject areas
- 一般材料科學
- 凝聚態物理學