Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect

Zhi Wei Zheng, Hsiao Hsuan Hsu, Chun Hu Cheng, Po Chun Chen

研究成果: 雜誌貢獻文章同行評審

4 引文 斯高帕斯(Scopus)

摘要

We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ~300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect.

原文英語
頁(從 - 到)431-435
頁數5
期刊Physica Status Solidi - Rapid Research Letters
8
發行號5
DOIs
出版狀態已發佈 - 2014 五月

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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